elektronische bauelemente SSD30N02 30a, 20v, r ds(on) 21 m n-ch enhancement mode power mosfet 29-apr-2016 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252 (d - pack) 30n02 rohs compliant product a suffix of -c specifies halogen free description SSD30N02 is the highest performance trench n-ch mosfet with extreme high cell density, which provid es excellent r ds(on) and gate charge for most synchronous buck converter applications. SSD30N02 meets the rohs and green product requirement with full function reliability approved . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline green device available marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v t c =25c 30 t c =100c 19 t a =25c 9 continuous drain current 1 t a =70c i d 7 a pulsed drain current@ t c =25c 2 i dm 40 a total power dissipation@ t c =25c 3 p d 27.8 w maximum thermal resistance from junction to ambient 1 r ja 50 maximum thermal resistance from junction to case 1 r jc 4.5 c / w operating junction and storage temperature range t j , t stg -55~150 c date code 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.336 ref. b 4.95 5.50 k 0.89 ref. c 2.10 2.50 m 0.50 1.14 d 0.665 typ. n 1.55 typ. e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58 ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente SSD30N02 30a, 20v, r ds(on) 21 m n-ch enhancement mode power mosfet 29-apr-2016 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage bv dss 20 - - v v gs =0, i d =250 a - - 1 v ds =16v, v gs =0, t j =25c drain-source leakage current i dss - - 30 a v ds =16v, v gs =0, t j =85c gate-source leakage current i gss - - 100 na v ds =0v, v gs = 12v gate-threshold voltage v gs(th) 0.5 0.7 1 v v ds =v gs , i d =250 a - 16 21 v gs =4.5v, i d =10a static drain-source on-resistance 2 r ds(on) - 21 26 m v gs =2.5v, i d =5a input capacitance c iss - 600 - output capacitance c oss - 100 - reverse transfer capacitance c rss - 72 - pf v ds =10v v gs =0 f=1mhz total gate charge q g - 6.5 - gate-source charge q gs - 0.9 - gate-drain (miller) charge q gd - 2 - nc v ds =10v v gs =4.5v i d =15a turn-on delay time t d(on) - 8.5 - rise time t r - 13 - turn-off delay time t d(off) - 23.5 - fall time t f - 4 - ns v dd =10v v gs =10v r g =6 r l =10 i d =1a source-drain diode characteristics diode forward voltage 2 v sd - - 1.2 v i s =1.3a, v gs =0v continuous source current 1,4 i s - - 30 a pulsed source current 2,4 i sm - - 40 a v g =v d =0v, force current reverse recovery time t rr - 9 - ns reverse recovery charge q rr - 3 - nc i f =8a , di/dt=100a/ s, t j =25c notes: 1. the data is tested when the surface of the devic e is mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the data is tested by the pulse: pulse width Q 300s, duty cycle Q 2%. 3. the power dissipation is limited by 150c juncti on temperature. 4. the data is theoretically the same as i d and i dm , in real applications, the data should be limited by the total power dissipation.
elektronische bauelemente SSD30N02 30a, 20v, r ds(on) 21 m n-ch enhancement mode power mosfet 29-apr-2016 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSD30N02 30a, 20v, r ds(on) 21 m n-ch enhancement mode power mosfet 29-apr-2016 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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